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this is information on a product in full production. june 2014 docid026363 rev 2 1/16 STL13N60M2 n-channel 600 v, 0.39 ? typ., 7 a mdmesh ii plus? low q g power mosfet in a powerflat? 5x6 hv package datasheet ? production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications description this device is an n-channel power mosfet developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . this revolutionary power mosfet associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. am15540v2 5 6 7 8 12 34 top view d(5, 6, 7, 8) g(4) s(1, 2, 3) 1 2 3 4 powerflat? 5x6 hv order code v ds @ t jmax r ds(on) max i d STL13N60M2 650 v 0.42 ? 7 a table 1. device summary order code marking package packaging STL13N60M2 13n60m2 powerflat? 5x6 hv tape and reel www.st.com
contents STL13N60M2 2/16 docid026363 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
docid026363 rev 2 3/16 STL13N60M2 electrical ratings 16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 7 (1) 1. the value is rated according to r thj-case and limited by package a i d drain current (continuous) at t c = 100 c 4.7 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 28 a p tot total dissipation at t c = 25 c 55 w dv/dt (3) 3. i sd 7 a, di/dt 400 a/ s; v ds peak < v (br)dss , v dd =400 v. peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 480 v mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 2.27 c/w r thj-pcb thermal resistance junction-pcb max (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board 59 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 2.8 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 125 mj
electrical characteristics STL13N60M2 4/16 docid026363 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0, v ds = 600 v 1 a v gs = 0, v ds = 600 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.5 a 0.39 0.42 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v gs = 0, v ds = 100 v, f = 1 mhz, - 580 - pf c oss output capacitance - 32 - pf c rss reverse transfer capacitance -1.1-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 480 v - 120 - pf r g intrinsic gate resistance f = 1 mhz open drain - 6.6 - q g total gate charge v dd = 480 v, i d = 11 a, v gs = 10 v (see figure 15 ) -17-nc q gs gate-source charge - 2.5 - nc q gd gate-drain charge - 9 - nc
docid026363 rev 2 5/16 STL13N60M2 electrical characteristics 16 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 5.5 a, r g = 4.7 ? , v gs = 10 v (see figure 14 and 19 ) -11-ns t r rise time - 10 - ns t d(off) turn-off delay time - 41 - ns t f fall time - 9.5 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 7 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 28 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage v gs = 0, i sd = 7 a - 1.6 v t rr reverse recovery time i sd = 11 a, di/dt = 100 a/ s v dd = 60 v (see figure 16 ) -297 ns q rr reverse recovery charge - 2.8 c i rrm reverse recovery current - 18.5 a t rr reverse recovery time i sd = 11 a, di/dt = 100 a/ s v dd = 60 v, t j =150 c (see figure 16 ) -394 ns q rr reverse recovery charge - 3.8 c i rrm reverse recovery current - 19 a
electrical characteristics STL13N60M2 6/16 docid026363 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 1ms 100s 0.01 tj=150c tc=25c single pulse 100 10ms gipg130520141013sa single pulse 0.05 0.02 0.01 =0.5 0.1 0.2 k 10 t p (s) -5 10 -4 10 -3 10 10 -2 10 -1 10 -6 10 -3 10 -2 -1 10 zthpowerflat_5x6_19 figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v br(dss) vs temperature figure 7. static drain-source on-resistance i d 12 8 4 0 0 8 v ds (v) (a) 4 12 16 4v 5v 6v v gs =7, 8, 9, 10v 16 20 am15712v1 i d 4 0 0 4 v gs (v) 8 (a) 2 6 8 12 v ds =18v 16 20 am15713v1 v br(dss) -50 t j (c) (norm) 0 0.9 0.94 0.98 1.02 1.06 i d =1 ma 50 100 1.1 am15714v1 r ds(on) 0.390 0.385 0.380 0.375 0 4 i d (a) ( ) 2 6 0.395 v gs =10v 8 10 0.400 0.405 0.410 0.415 am15912v1
docid026363 rev 2 7/16 STL13N60M2 electrical characteristics 16 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. output capacitance stored energy v gs 6 4 2 0 0 q g (nc) (v) 8 8 4 10 v dd =480v 300 200 100 0 400 v ds 12 16 500 v ds (v) i d =11a am15716v1 c 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 100 1000 am15717v1 v gs(th) 0.9 0.8 0.7 0.6 t j (c) (norm) -50 1.0 i d =250a 0 50 100 1.1 am15718v1 r ds(on) 1.1 0.9 0.7 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 i d = 4.5 a 1.3 1.5 1.7 1.9 2.1 2.3 v gs = 10 v am15916v1 v sd 0 4 i sd (a) (v) 2 10 6 8 0.5 0.6 0.7 0.8 t j =-50c t j =150c t j =25c 0.9 1 am15720v1 eoss 0 v ds (v) (j) 200 100 500 0 1 2 3 4 300 400 am15721v1
test circuits STL13N60M2 8/16 docid026363 rev 2 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid026363 rev 2 9/16 STL13N60M2 package mechanical data 16 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL13N60M2 10/16 docid026363 rev 2 figure 20. powerflat? 5x6 hv drawing 8368143_rev_b
docid026363 rev 2 11/16 STL13N60M2 package mechanical data 16 figure 21. powerflat? 5x6 hv recommended footprint (dimensions are in mm) 8368143_rev_b_footprint
package mechanical data STL13N60M2 12/16 docid026363 rev 2 table 9. powerflat? 5x6 hv mechanical data dim. mm min. typ. max. a0.80 1.00 a1 0.02 0.05 a2 0.25 b0.30 0.50 d5.005.205.40 e5.956.156.35 d2 4.30 4.40 4.50 e2 3.10 3.20 3.30 e1.27 l0.500.550.60 k1.902.002.10
docid026363 rev 2 13/16 STL13N60M2 packaging mechanical data 16 5 packaging mechanical data figure 22. powerflat? 5x6 tape (a) figure 23. powerflat? 5x6 package orientation in carrier tape. a. all dimensions are in millimeters. measured from centerline of sprocket hole to centerline of pocket. cumulative tolerance of 10 sprocket holes is 0.20 . measured from centerline of sprocket hole to centerline of pocket. (i) (ii) (iii) 2 2.00.1 (i) bo (5.300.1) ko (1.200.1) 0.05) ?1.5 min. ?1.550.05 p ao(6.300.1) f(5.500.1)(iii) w(12.000.3) 1.750.1 4.00.1 (ii) p 0 y y section y-y c l p1(8.000.1) do d1 e 1 (0.30 t ref.r0.50 ref 0.20 base and bulk quantity 3000 pcs 8234350_tape_rev_c pin 1 identification
packaging mechanical data STL13N60M2 14/16 docid026363 rev 2 figure 24. powerflat? 5x6 reel 2.20 ?21.2 13.00 core detail 2.50 1.90 r0.60 77 128 ?a r1.10 2.50 4.00 r25.00 part no. w1 w2 18.4 (max) w3 06 ps esd logo at t e n t i o n observe precautions for handling electrostatic sensitive devices 11.9/15.4 12.4 (+2/-0) a 330 (+0/-4.0) all dimensions are in millimeters ?n 178(2.0) 8234350_reel_rev_c
docid026363 rev 2 15/16 STL13N60M2 revision history 16 6 revision history table 10. document revision history date revision changes 15-may-2014 1 first release. 27-jun-2014 2 ? updated: figure 3 ? minor text changes
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